Annealing temperature effect on nanostructure and phase transition of Copper Oxide thin films

International Journal of Nano Dimension

مقاله 7، دوره 2، شماره 3، خرداد 2012، صفحه 185-190   

نوع مقاله: Reasearch Paper

شناسه دیجیتال (DOI): 10.7508/ijnd.2011.03.006

نویسندگان

K. Khojier^{* 1}؛ A. Behju²

¹Department of Physics, Chalous branch, Islamic Azad University, Chalous, Iran.

²Department of Chemistry, Chalous branch, Islamic Azad University, Chalous, Iran.

چکیده

This paper addresses the annealing temperature effect on nanostructure and phase transition of copper oxide thin films, deposited by PVD method on glass substrate (at 110 nm thickness) and post annealed at different temperatures (200-400°C) with a flow of 1 cm³s^-1 Oxygen. The X-ray diffraction (XRD) was employed for crystallographic and phase analyses, while atomic force microscopy (AFM) was used for morphology investigation. The results showed (CuO₂) cuprite phase for samples annealed at 200 and 250°C and (CuO) tenorite phase for samples annealed at 350 and 400°C, while sample annealed at 300°C had a complex phases (CuO₂ and CuO). The size of the grains increased, but roughness increased and then decreased by increasing of annealing temperature. Furthermore, calculated activation energy from grain diameter (at arrhenius plot) was 0.54 eV.  

کلیدواژه‌ها

Thin film؛ Copper oxide؛ Annealing temperature؛ Nanostructure and phase transition