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High-Speed Ternary Half adder based on GNRFET | ||
Journal of Nanoanalysis | ||
مقالات آماده انتشار، پذیرفته شده، انتشار آنلاین از تاریخ 01 خرداد 1398 | ||
نوع مقاله: Original Research Paper | ||
شناسه دیجیتال (DOI): 10.22034/jna.2019.1865874.1138 | ||
نویسندگان | ||
Mahdieh Nayeri1؛ Peiman Keshavarzian* 2؛ Maryam Nayeri3 | ||
1Department of Computer Engineering, Kerman Branch, Islamic Azad University, Kerman | ||
2Department of computer engineering, islamic azad university, kerman branch, kerman, iran. | ||
3Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran | ||
چکیده | ||
Superior electronic properties of graphene make it a substitute candidate for beyond-CMOS nanoelectronics in electronic devices such as the field-effect transistors (FETs), tunnel barriers, and quantum dots. The armchair-edge graphene nanoribbons (AGNRs), which have semiconductor behavior, are used to design the digital circuits. This paper presents a new design of ternary half adder based on graphene nanoribbon FETs (GNRFETs). Because of reducing chip area and integrated circuit (IC) interconnects, ternary value logic is a good alternative to binary logic. Extensive simulations have been performed in Hspice with 15-nm GNRFET technology to investigate the power consumption and delay. Results show that the proposed design is very high-speed in comparison with carbon nanotube FETs (CNTFETs). The proposed ternary half adder based on GNRFET at 0.9V exhibiting a low power-delay-product (PDP) of ~10-20 J, which is a high improvement in comparison with the ternary circuits based on CNTFET, lately proposed in the literature. This proposed ternary half adder can be advantageous in complex arithmetic circuits. | ||
کلیدواژهها | ||
Ternary Half Adder؛ Armchair- Edge Graphene Nanoribbon؛ Power Consumption؛ High-Speed | ||
آمار تعداد مشاهده مقاله: 840 |