Effects of Line Defect on Electronic Transport of Double Gate Armchair Graphene Nanoribbon Field Effect Transistors: a Simulation Study

Journal of Applied Dynamic Systems and Control

دوره 3، شماره 1، شهریور 2020، صفحه 17-24   

نوع مقاله: Original Article

نویسندگان

Mohammad Bagher Nasrollahnejad^{* 1}؛ Parviz Keshavarzi‎²

¹Department of Electrical Engineering, Gorgan Branch, Islamic ‎Azad University, Gorgan, Iran

²Electrical and Computer Engineering Department, Semnan ‎University, Semnan, Iran

چکیده

Defect engineering in nonmaterials could be used to modify the properties of materials for various practical applications. In this paper, the impact of linear arrangement of ISTW (LA-ISTW) defect and its position on the transport properties of grapheme nanoribbon transistors is investigated. The analysis show that creating the LA-ISTW defect with a certain density in the proper position of the channel length leads to increase the bandgap, suppress ambipolar conduction and provides the higher on-off current ratio and therefore the structure with LA-ISTW defect in the proper defect position and the specified defect density has better performance than conventional structure. The results have also demonstrated the defect engineering potential on modifying the electronic transport properties of GNR FETs. Simulations has been done based on self-consistent solution of full 3D Poisson and Schrodinger equations within the non-equilibrium Green’s function formalism. Graphene nanoribbons with non-passivated edges are used in the transistor channel.

کلیدواژه‌ها

Inverse Stone Thrower Wales defect؛ Electronic transport properties؛ Graphene nanoribbon field-effect transistor؛ Non-equilibrium Green's function formalism

مراجع

[1] S. Raghavan, I. Stolichnov, N. Setter, et al., "Long-term retention in organic ferroelectric-graphene memories," Appl. Phys. Lett. 100 (2) (2012): 023507.

[2]  K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos,  I. V. Grigorieva, A. A. Firsov, "Electric field effect in atomically thin carbon films," Science. 306 (2004): 666-669.

[3] A. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, C. N. Lau, "Superior thermal conductivity of single-layer graphene," Nano Lett. 8(3) (2008): 902-907.

[4] Y. M. Lin, A. Valdes-Garcia, S. J. Han, D. B. Farmer, I. Meric, Y. Sun, Y. Wu, C. Dimitrakopoulos, A. Grill, P. Avouris, K.A. Jenkins, "Wafer-scale graphene integrated circuit," Science 332 (6035) (2011): 1294-1297.

[5] A. K. Geim, K. S. Novoselov, "The rise of graphene," Nat. Mater. 6 (2007): 183.

[6] T. Feng, D. Xie, H. Zhao, G. Li, J. Xu, T. Ren, H. Zhu, "Ambipolar/unipolar conversion in graphene transistors by surface doping," Appl. Phys. Lett. 103(19) (2013): 193502.

[7] F. Banhart, J. Kotakoski, A. V. Krasheninnikov," Structural defects in graphene," ACS Nano. 5(1) (2011): 26-41.

[8] I. Zsoldos, "Effect of topological defects on graphene geometry and stability," Nanotechnol. Sci. Appl. 3 (2010): 101.

[9] L. D. Carr, M. T. Lusk, "Defect engineering: Graphene gets designer defects," Nat. Nanotechnol. 5(5), (2010): 316-317.

[10] L. Vicarelli, S.  J.  Heerema, C.  Dekker, H. W. Zandbergen, "Controlling defects in graphene for optimizing the electrical properties of graphene nanodevices," ACS Nano. 9(4) (2015): 3428-3435.

[11] H. Owlia, P. Keshavarzi, "Locally Defect-Engineered Graphene Nanoribbon Field-Effect Transistor," IEEE Trans. Electron Dev. 63(9) (2016): 3769-3775.

[12] H. Xu, D. Zhang, L. Chen, "Effect of defect on electronic properties of zigzag graphene nanoribbons," J. Cent. South Univ. 43(9) (2012): 3510-3516.

[13] K. L. Wong, M. A. S. Mahadzir, W. K. Chong, M. S. Rusli, C.S. Lim and M. L. P., Tan, "Graphene nanoribbon simulator of vacancy defects on electronic structure," IJEEI. 6(3) (2018): 265-273.

[14] M. Poljak, E. B. Song, M. Wang, T. Suligoj, K. L. Wang, "Influence of edge defects, vacancies, and potential fluctuations on transport properties of extremely scaled graphene nanoribbons," IEEE. Trans. Electron Dev. 59(12) (2012): 3231-3238.

[15] I. Deretzis, G. Fiori, G. Iannaccone, G. Piccitto, A. La Magna, "Quantum transport modeling of defected graphene nanoribbons," Physica E: Low-dimensional Systems and Nanostructures Phys. E: Low-Dimens. Syst. Nanostruct. 44 (2012): 981-984.

[16] H. Zhang,G. Lee, K. Cho, "Thermal transport in graphene and effects of vacancy defects," Phys. Rev. B. 84(11) (2011): 115460.

 [17] D. Orlikowski, M. Buongiorno Nardelli, J. Bernholc, C. Roland, "Ad-dimers on strained carbon nanotubes: A new route for quantum dot formation," Phys. Rev. Lett. 83(20) (1999): 4132.

[18] H. Zeng,  J. Zhao, J. W. Wei, H. F. Hu, Effect of N doping and Stone-Wales defects on the electronic properties of graphene nanoribbons, Eur. Phys. J. B. 79(3) (2011): 335-340.

[19] A. Nazari, R. Faez, H. Shamloo," Improving ION/IOFF and sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects," Superlattices Microstruct. 86, (2015): 483-492.

 [20] D.G. Kvashnin, L. A. Chernozatonskii, "Impact of symmetry in transport properties of graphene nanoribbons with defects," Appl. Phys. Lett. 105(8) (2014): 083115.

 [21] J. Ma, D. Alfe, A. Michaelides, E. Wang, "Stone-Wales defects in graphene and other planar sp2-bonded materials," Phys. Rev. B. 80(3) (2009): 033407.

[22] S. Bhowmick, U. V. Waghmare, "Anisotropy of the Stone-Wales defect and warping of graphene nanoribbons: A first-principles analysis," Phys. Rev. B. 81(15) (2010): 155416.

[23] Y. Ren, K. Q. Chen, "Effects of symmetry and Stone–Wales defect on spin-dependent electronic transport in zigzag graphene nanoribbons," J. Appl. Phys. 107(4) (2010) 044514.

[24] J. Zhao, H. Zeng , B. Li,  J. Wei, J. Liang, "Effects of stone-wales defect symmetry on the electronic structure and transport properties of narrow armchair graphene nanoribbon," J . Chem. Phys. 77 (2015): 8-13.

 [25] M. T. Lusk, D. T. Wu, L. D Carr, "Graphene nanoengineering and the inverse Stone-Thrower-Wales defect," Phys. Rev. B.  81(15) (2010): 155444.

[26] M. T Lusk, L. D Carr, "Nanoengineering defect structures on graphene," Phys. Rev. Lett. 100 (17) (2008): 175503.

 

[27] A. P. Sgouros, G. Kalosakas, M. M. Sigalas, K. Papagelis, "Exotic carbon nanostructures obtained through controllable defect engineering," RSC Advances. 5(50) (2015): 39930-39937.

 [28] S. Fotoohi, M. K. Moravvej-Farshi, R. Faez, "Electronic and transport properties of monolayer graphene defected by one and two carbon ad-dimers," Appl. Phys. A. 116(4) (2014): 2057-2063.

[29] S. Fotoohi, M. K. Moravvej-Farshi, R. Faez, "Role of 3D-paired pentagon–heptagon defects in electronic and transport properties of zigzag graphene nanoribbons," Appl. Phys. A. 116(1) (2014): 295-301.

[30] M. B. Nasrollahnejad, P. Keshavarzi, "Inverse Stone Thrower Wales defect and transport properties of 9AGNR Double-gate Graphene Nanoribbon FETs," J. Cent. South. Univ. 26(11) (2019): 2943-2952.

[31] L. Kou, C. Tang, W. Guo, C. Chen, "Tunable magnetism in strained graphene with topological line defect," ACS Nano. 5(2) (2011): 1012-1017.

 [32] S. Okada, T. Kawai, K. Nakada, "Electronic structure of graphene with a topological line defect," J. Phys. Soc. Jpn .80(1) (2011): 013709.

[33] J. H. Chen,  G. Autès,  N. Alem,  F. Gargiulo,  A. Gautam, M. Linck,  C. Kisielowski,  O. V. Yazyev, S.G. Louie, A. Zettl, "Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering," Phys. Rev. B. 89(12) (2014): 121407.

[34] J. Lahiri, Y. Lin, P. Bozkurt, I. I. Oleynik, M. Batzill, "An extended defect in graphene as a metallic wire," Nat. Nanotechnol. 5(5) (2010): 326 .

 [35] M. H. Tajarrod, H. Rasooli Saghai, "High Ion/Ioff current ratio graphene field effect transistor: the role of line defect," Beilstein J. Nanotechnol. 6(1) (2015): 2062-2068.

[36] D. Gunlycke, C. T. White, "Graphene valley filter using a line defect," Phys. Rev. Lett. 106(13) (2011): 136806.

[37] D. A. Bahamon, A. L. C. Pereira, P. A. Schulz, "Third edge for a graphene nanoribbon: a tight-binding model calculation," Phys. Rev. B. 83(15) (2011):155436.

 [38] H. Owlia, P. Keshavarzi, "Investigation of the novel attributes of a double-gate graphene nanoribbon FET with AlN high-κ dielectrics," Superlattices Microstruct. 75 (2014): 613-620.

 [39] M. B. Nasrollahnejad, P. Keshavarzi, "Inverse Stone Throwers Wales defect and enhancing ION/IOFF ratio and subthreshold swing of GNR transistors," Eur. Phys. J. Appl. Phys. 86(2) (2019): 2.

 

[40] H Owlia, P Keshavarzi, M. B Nasrollahnejad, “Effects of Stone - Wales Defect Position in Graphene Nanoribbon Field - Effect Transistor”, J. Nano. Elec. Phys. 9(6) (2017): 06008.

[41] S. Datta, "Quantum Transport: Atom to Transistor" (Cambridge University Press, New York, 2005)

[42] F. Hao, D. Fang, Z. Xu, "Mechanical and thermal transport properties of graphene with defects," Appl. Phys. Lett. 99(4) (2011): 041901.

[43] M. Poljak, and T. Suligoj, "Quantum transport analysis of conductance variability in graphene nanoribbons with edge defects." IEEE Trans. Electron Dev. 63(2) (2015): 537-543.

 [44] F. Sols, F. Guinea, A. H, Castro Neto, "Coulomb blockade in graphene nanoribbons," Phys. Rev. Lett. 99(16) (2007): 166803.

[45] D. Gunlycke, D. A. Areshkin, C. T. White, "Semiconducting graphene nanostrips with edge disorder," Appl. Phys. Lett. 90(14) (2007): 142104.

[46] J. H. Chen, C. Jang, S. D. Xiao, M. Ishigami, M. S. Fuhrer, "Intrinsic and extrinsic performance limits of graphene devices on  SiO2," Nat. Nanotechnol. 3(4) (2008):206-209.