Design, simulation and analysis of high-K gate dielectric FinField effect transistor

International Journal of Nano Dimension

مقاله 10، دوره 12، شماره 3، مهر 2021، صفحه 305-309   

نوع مقاله: Short Communication

شناسه دیجیتال (DOI): 10.22034/ijnd.2021.681554

نویسندگان

Marupaka Aditya¹؛ Karumuri Srinivasa Rao^{* 1}؛ Kondavitee Girija Sravani^{1، 2}؛ Koushik Guha²

¹MEMS Research Center, Department of Electronics and Communication Engineering, KoneruLakshmaiah Education Foundation (Deemed to be University), Green Fields, Vaddeswaram, Andhra Pradesh, India.

²National MEMS Design Center, Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Assam, India.

چکیده

The devices with additional gates like Fin Field effect transistor (FinFET) provide higher control on subthreshold parameters and are favorable for Ultra large-scale integration. Also, these structures provide high control on current through the channel and with minimum leakage. In this paper we designed a FinFET with high-K gate dielectric material i.e Hafnium oxide as gate oxide. A comparison of similar sized transistor with Air and Silicon dioxide as gate material is performed. The comparison is mainly in terms of performance parameters like transconductance, subthreshold slope, and drain current characteristics. There is an increase in ON current on using a high-K dielectric material and subsequently an improvement in other parameters like subthreshold slope, transconductance and intrinsic gain.

کلیدواژه‌ها

FinFET؛ Hafnium Oxide؛ High-K Dielectric؛ Subthreshold Slope؛ Transconductance

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