Anisotropic and Isotropic Elasticity Applied for the Study of Elastic Fields Generated by Interfacial Dislocations in a Heterostructure of InAs/(001)GaAs Semiconductors

Journal of Solid Mechanics

مقاله 8، دوره 13، شماره 4، اسفند 2021، صفحه 503-512   

نوع مقاله: Research Paper

شناسه دیجیتال (DOI): 10.22034/jsm.2021.1920891.1672

نویسندگان

R Makhloufi¹؛ A Boussaha²؛ R Benbouta^{* 1}؛ L Baroura³

¹Mechanical Engineering Department, Faculty of Technology, LICEGS Laboratory, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria

²Mechanical Engineering Department, Faculty of Technology, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria

³Mechanical Engineering Department, University of Constantine 1, Algeria

چکیده

This work is a study of the elastic fields’ effect (stresses and displacements) caused by dislocations networks at a heterostructure interface of a InAs / GaAs semiconductors thin system in the cases of isotropic and anisotropic elasticity. The numerical study of this type of heterostructure aims to predict the behavior of the interface with respect to these elastic fields satisfying the boundary conditions. The method used is based on a development in Fourier series. The deformation near the dislocation is greater than the other locations far from the dislocation.     

کلیدواژه‌ها

Elastic fields؛ InAs/GaAs؛ Anisotropic؛ Isotropic؛ Semiconductors

مراجع

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