On Increasing of Integration Rate of Elements of a Current Source Circuit

International Journal of Mathematical Modelling & Computations

مقاله 6، دوره 11، 1 (WINTER) - شماره پیاپی 41، خرداد 2021، صفحه 73-95   

نوع مقاله: Full Length Article

شناسه دیجیتال (DOI): 10.30495/ijm2c.2021.684820

نویسنده

Evgeny L. Pankratov^*

Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia

چکیده

In this paper we introduce an approach to increase integration rate of elements of a current source circuit. Framework the approach we consider a hetero-structure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.

کلیدواژه‌ها

Current source circuit؛ Optimization of manufacturing؛ Analytical approach for modelling