Synthesis of n-type and p-type CuInS2 thin films via simple SILAR method

Journal of Chemical Reactivity and Synthesis

دوره 10، شماره 2، مرداد 2020، صفحه 87-93   

نوع مقاله: Communication

نویسندگان

hossien Alehdaghi؛ Mohammad Zirak^*

Department of physics, Hakim Sabzevari University, Sabzevar, 9617976487, Iran

چکیده

Among various CuInS₂-rerlated heterojunctions, it is expected that CIS-based p−n junctions are high-performance photo-active electrodes. Herein, both n-type and p-type CuInS2 thin films were synthesized via facile successive ion layer adsorption and reaction (SILAR) method, using aqueous (A-CIS) and mathanolic (M-CIS) SILAR solutions, respectively. Based on UV-visible transmission spectra, M-CIS thin films were more transparent with larger band gap energy (1.6 eV) than A-CIS thin films (1.5 eV). The A1-mode Raman peak of M-CIS thin film was located at 293 cm^-1 which has a red shift of 5 cm-1 as compared to A-CIS one, indicating that M-CIS has smaller CuInS₂ nanoparticles. The Mott-Schottky plots revealed that A-CIS is an n-type semiconductor, while M-CIS thin films have p-type semiconducting behavior, which is due to different Cu/In ratio in these thin films. The obtained results can be very useful to prepared CIS-based p-n junctions toward high performance solar-based devices.

کلیدواژه‌ها

CuInS2 thin film؛ heterojunction؛ solar- based devices