Effect of integer quantum Hall effect at the presence of Gaussian and quantum dot dopants

Journal of Chemical Reactivity and Synthesis

دوره 12، شماره 3، آذر 2022، صفحه 143-149   

نوع مقاله: Research Article

نویسندگان

Javad Souri Laki^{* 1}؛ Mohammad Moarrefi Romeileh²

¹Department of physics, Payame Noor University, Ahvaz, Iran

²Department of physics, Ahvaz branch, Islamic Azad University, Ahvaz, Iran

چکیده

In this study, the effect of integer Hall effect on nanoribbons of boron nitride at the presence of impurity function concerning magnetic resistance in terms of filling ratio was investigated. First, a dopant will be applied to the system in the form of Dirac Delta function, at the presence of this dopant, Landau levels will be divided into extended and localized levels giving rise to Hall step. In this model, the Aharanov-Boehm fluctuations are observed and impurity eradicates stagnation in energy levels. In fact, by increasing the width and height of the quantum dot destroys the step, and finally, the quantum-hall effect vanishes Then, another dopant will be applied to the system in the form of quantum dot. By increase of the width and height of quantum dot, the Hall step will fade and quantum Hall effect will disappear. The more the increase of quantum hall domain, the faster the Hall step and therefore quantum effect will fade.

کلیدواژه‌ها

Quantum Hall Effect؛ Landau levels؛ quantum dot؛ Hall conductivity