High Detectivity in GaN Self –Assembled QDIP at room temperature

journal of Artificial Intelligence in Electrical Engineering

دوره 10، شماره 38، آذر 2021، صفحه 1-6   

نوع مقاله: Original Article

نویسندگان

Hossein Fazlali pour^{* 1}؛ Majid Ghandchi²

¹Department of Electrical Engineering. Ahar Branch, Islamic Azad University, Ahar, Iran,

²Department of Electrical Engineering, Ahar Branch, Islamic Azad University, Ahar, Iran

چکیده

In this paper, we present a self-assembled (pyramidal shaped) QDIPs, which operates in the long wavelength IR. A pyramidal shaped 6×6×3 𝑛𝑚 GaN quantum dot (QD) in a large rectangular cube box of 18×18×9 𝑛𝑚 dimensions. Solves single-band effective mass Schrödinger equation for the gamma conduction band in order to calculate the QD electronic structure. The temperature dependence of the dark current was shown and the amount of dark current at room temperature was equal to 1×〖10〗^(-2) A, which is an acceptable value. The pyramidal GaN QDs has demonstrated exceptionally low dark current, and high detectivity. Detectivity up to 4×〖10〗^9 cm√Hz/W, at room temperature will be the strength of this research.

کلیدواژه‌ها

Photodetector؛ self-assembled (pyramidal shaped) QDIPs؛ detectivity؛ room temperature