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Comparative study of Photoluminescence Properties of Various Lead Sulfide Morphologies | ||
Majlesi Journal of Telecommunication Devices | ||
مقاله 3، دوره 1، شماره 3، آذر 2012 اصل مقاله (530.97 K) | ||
نوع مقاله: Articles | ||
نویسندگان | ||
Mohsen Cheraghizade* 1؛ Ramin Yousefi2؛ Farid Jamali-Sheini3؛ Abdolhossein Sa'aedi4 | ||
1Department of Electronics, Bushehr Branch , Islamic Azad University, Bushehr , Iran | ||
2Department of Physics, Masjed-Soleiman Branch, Islamic Azad University (I.A.U.), Masjed-Soleiman, Iran | ||
3Department of Physics, Ahwaz Branch, Islamic Azad University, Ahwaz, Iran | ||
4Department of Electronics , Bushehr Branch , Islamic Azad University, Bushehr , Iran | ||
چکیده | ||
Photoluminescence analysis is a useful method to study the optical properties of semiconductor nanostructures. Distinct processes take place to result in the light emission from the nanostructure. Various deposition methods and morphologies changed the emission band in semiconductor nanostructures. Three different morphology of Lead Sulfide structures such as nonospheres, star-shaped and dendrite nanostructures have been analyzed and the Photoluminescence results were compared. In three cases, band emissions are in visible region and it was observed that the incidence of quantum limits in resulting of increasing surface to volume ratio is impressive to optical properties. | ||
کلیدواژهها | ||
en | ||
مراجع | ||
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