Design of High Isolation Ka-band Radio Frequency MEMS Capacitive Shunt Switch

Majlesi Journal of Telecommunication Devices

مقاله 2، دوره 2، شماره 4، فروردین 2013   

نوع مقاله: Articles

نویسندگان

Reza Pourandoost؛ Saber Izadpanah Tous^* ؛ Hooman Nabovati؛ Khalil Mafinejad

Sadjad Institute for Higher Education

چکیده

Radio frequency (RF) micro electro-mechanical systems (MEMS) switches are rapidly replacing the PIN diodes and field-effect transistors (FET). Linear behavior, low power consumption, low insertion loss, high isolation, improvement power handling and etc. are benefits of MEMS switches. This paper presents a high isolation RF MEMS capacitive switch with two shunt beams for Ka-band (27-40 GHz) applications such as in communications satellites. Simulation results using Ansoft’s high frequency simulation software (HFSS) at Ka-band shows in the down-state of switch, the isolation (S21) is > 47 dB and return loss (S11) is < 0.3 dB. In the up-state, the insertion loss (S21) is less than 0.15 dB and the return loss (S11) is more than 18 dB. The pull down voltage of designed switch is 5.13 V and down-state to up-state capacitance ratio (Cd/Cu=12.11pF/0.137pF) is 88.39. Also a novel index material (IM2) is proposed to determine optimum material using Ashby approach. In this paper the Aluminum (Al) is chosen for the membrane for having low pull down voltage and silicon nitride (Si3N4) is chosen for dielectric for having faster switching speed and larger down-state capacitance.

کلیدواژه‌ها

en

مراجع

[1] P. Bahmanyar, Kh. Mafinezhad and M. Bahmanyar, “Switching Performance Analysis in RF MEMS Capacitive Shunt switches by Geometric Parameters Trade-Offs ,” 2010 IEEE Asia Pacific Conference on Circuits and Systems, pp. 831-834, 2010.

[2] C. Christodoulou, “RF MEMS and its applications to microwave systems, antennas and wireless communications,” Proceedings of the SBMO/IEEE MTT-S International Conference on Microwave and Optoelectronics, pp.525 -531 2003

[3] K. E. Petersen, “Micromechanical membrane switches on silicon,” IBM Journal of Research and Development, vol. 23, pp. 376-385, July 1971.

[4] G. M. Rebeiz, RF MEMS: Theory, Design and Technology, 2003 John Wiley & Sons, Inc.

[5] T. W. Jau, “RF MEMS Switches: High-Frequency Performance and Hot-Switching Reliability,” High Frequency Electronics, pp. 32-38, 2013.

[6] H.S. Newman, “RF MEMS switches and applications”, Proceedings of the 40th annual Reliability Physics Symposium, pp. 111-115, 2002.

[7] G. M. Rebeiz and J. B. Muldavin, “RF MEMS Switches and Switch Circuits,” IEEE Microwave Magazine, Vol. 2, No. 4, pp. 59-71, 2001.

[8] J. B. Muldavin and G. M. Reheir, “High Isolation CPW MEMS Shunt Switches - Part 1: Modeling”, IEEE Transactions on Microwave Theory and Techniques, Vol. 48, No. 6, pp. 1045 – 1052, 2000.

[9] J. B. Muldavin and G. M. Rebeiz, “High Isolation CPW MEMS Shunt Switches - Part 2: Design”, IEEE Transactions on Microwave Theory and Techniques, Vol. 48, No. 6, pp. 1053-1056, 2000.

[10] J. J. Yao, “Topical Review: RF MEMS from A Device. Perspective,” Journal of Micromechanics and Microengineerig, Vol. 10, No. 4, pp. R9-R38, 2000.

[11] H. de Los Santos, Introduction to Microelectromechanical (MEM) Microwave Systems, Boston: Artech House, 1999.

[12] E. R. Brown, “RF-MEMS Switches for Reconfigurable Integrated Circuits,” IEEE Transactions on Microwave Theory and Techniques, Vol. 46, No. 11, pp. 1845-1880, 1998.

[13] T. Campbell, “MEMS Switch Technology Approaches the “Ideal Switch”,” Applied Microwave & Wireless, Vol. 13, No. 5, pp. 100-107, 2001.

[14] D. Peroulis, S. P. Pacheco, K. Sarabandi and L. P. B. Katehi, “Electromechanical Considerations in Developing Low- Voltage RF MEMS Switches,” IEEE Transactions on Microwave Theory and Techniques, Vol. 51, No. 1, pp. 259-270, 2003.

[15] D. Peroulis, S. Pacheco, K. Sarabandi and L. P. B. Katehi, “MEMS Devices for High Isolation Switching and Tunable Filtering,” IEEE MTT-S International Microwave Symposium Digest, pp. 1217-1220, 2000.

[16] J. Y. Park, G. H. Kim, K. W. Chung and J. U. Bu, “Fully Integrated Micromachined Capacitive Switches for RF Applications,” IEEE MTT-S International Microwave Symposium Digest, pp. 283-286, 2000.

[17] Y. Liu, “MEMS and BST Technologies for Microwave Applications,” Ph.D. Thesis, University of California, Santa Barbara, 2002.

[18] B. Jlassi and A. Merdassi, “Design methodology of a high power RF MEMS switch for wireless applications,” 4th Annual Caneus Fly by Wireless Workshop, pp. 1-4, 2011

[19] J. B. Muldavin, and G. M. Rebeiz, “Nonlinear electro-mechanical modeling of MEMS switches,” IEEE MTT-S International Microwave Symposium Digest, pp. 219-2122, 2001.

[20] M. F. Ashby, Material selection in mechanical design, 2nd ed. Oxford (UK): Butterworth; 1999.

[21] O. Parate and N. Gupta, “Material selection for electrostatic microactuators using Ashby approach,” Materials and Design, Vol. 32, No. 3, pp. 1577-1581, 2011.

[22] G. Guisbiers, O. Van Overschelde and M. Wautelet, “Materials selection for thin films for radio frequency microelectromechanical systems,” Materials and Design, Vol. 28, No. 6, pp. 1994-1997, 2007.

[23] V. T. Srikar and S. M. Spearing, “Materials selection for microfabricated electrostatic actuators,” Sensors and Actuators A: Physical, Vo. 102, No. 3, pp. 279–285, 2003.

[24] Y. Mafinejad, A. Z. Kouzani, K. Mafinejad and D. Izadi, “Design and Simulation of a RF MEMS Shunt Switch for Ka and V Bands and the Impact of Varying Its Geometrical Parameters,” 52nd IEEE International Midwest Symposium on Circuits and Systems, pp. 823–826, 2009.

[25] Y. Mafinejad, A. Z. Kouzani, K. Mafinejad and H. Nabovati, “Design and simulation of a low voltage wide band RF MEMS switch,” IEEE International Conference on Systems, Man and Cybernetics, pp. 4623–4627, 2009.