Design and Analysis of Quantum Dot Based Avalanche Photodiode with Intersubband Multiplication

Majlesi Journal of Telecommunication Devices

مقاله 6، دوره 3، شماره 2، شهریور 2014   

نوع مقاله: Articles

نویسندگان

Amir Yousefli^{* 1}؛ Mahdi Zavvari²؛ Kambiz Abedi³

¹Department of Electrical Engineering Islamic Azad University, Ahar Branch Tabriz

²Department of Electrical Engineering, Urmia branch, Islamic Azad university, Urmia, Iran

³Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti, University, G. C. 1983963113, Tehran, Iran.

چکیده

This article presents an avalanche photodiode with quantum dot layers in its active region which operates at 10µm. Performance of this structure is based on intersubband impact ionization phenomenon in quantum dots. It requires lower energy threshold for the onset of avalanche phenomenon, hence it can work in lower operating voltages than bulks. In this paper, by presenting a theoretical approach for  intersubband transition rate and electron-electron interaction the photo-generated current was modeled and consequently the responsivity can be calculated.  Results show that peak responsivity at a voltage of 14V is obtained about 1.9 A/W. Also the dark current is modeled and calculated at different temperatures and applied voltages.

کلیدواژه‌ها

en

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