Design and simulation of an Improved NEMFET with Low Leakage Current and Sub-threshold Swing

Majlesi Journal of Telecommunication Devices

مقاله 3، دوره 7، شماره 4، اسفند 2018، صفحه 151-154   

نوع مقاله: Articles

نویسندگان

Nastaran Jafari^{* 1}؛ Farshad Babazadeh²؛ Zahra Ahangari³

¹Yadegar-e-Emam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran

²Yadegar-e-Emam Khomeini , IAU

³Islamic Azad University

چکیده

In this paper design and simulation of an improved depletion-mode n-channel nanoelectromechanical field effect transistor (NEMFET) at 300K is reported. The designed NEMFET is based on NEMS technology and fully compatible with CMOS fabrication process. A NEMFET is composed of a NEM relay and a MOSFET and comprises a movable gate and a semiconductor part, so that the flowing current is always in the semiconductor part. The nanomechanical movable gate was a bossed doubly clamped beam and simulated by COMSOL Multiphysics software and the electrical part was designed and simulated by ATLAS software. The designed NEMFET had a 25 nm length, 100 nm width and 5.2 nm thicknesses. Optimization was done by applying two 8.5 nm spaces, one between source to gate and the other between gate to drain. Simulation results show in the proposed structure, sub-threshold swing was decreased to 86 mV/dec and the Ion/Ioff ratio was increased to 8.68×104.

کلیدواژه‌ها

field effect transistor؛ NEMFET؛ Nanoelectromechanical Systems

مراجع

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