Design and Realization of a Junction-less TFET for Analog and Digital Applications Based on Strain Engineering

Majlesi Journal of Telecommunication Devices

مقاله 2، دوره 11، شماره 2، شهریور 2022، صفحه 67-74   

نوع مقاله: Original Article

شناسه دیجیتال (DOI): 10.30486/mjtd.2022.695917

نویسندگان

Fayzollah Khorramrouze¹؛ Seyed Ali Sedigh Ziabari^{* 1}؛ Ali Heydari²

¹Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran.

²Department of Electrical Engineering, Guilan University, Rasht, Ira

چکیده

This paper investigates the effects of the uniaxial tensile strain on the performance of an all silicon junction-less tunneling field-effect transistor (JLTFET) for analog and digital applications. The behavior of the JLTFET under global and local uniaxial strain are studied based on the energy band diagram at ON, OFF, and ambipolar states. Under local uniaxial tensile strain, it has been observed that the tunneling length at the channel/source interface in the ON state has been decreased and at the channel/drain interface in the OFF state has been increased. Simulations illustrate improvements in ON current, I_ON/I_OFF and steep sub threshold swing (SS) and superior transconductance (g_m). The strained JLTFET, also demonstrates capability for low-voltage application and high cut-off frequency (f_T) and suppressed ambipolar current (I_amb).

کلیدواژه‌ها

JLTFET؛ Band-to-band Tunneling؛ Local Strain؛ Global Strain؛ Ambipolar Current, Cut-off Frequency

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