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SOI DEVICE SIMULATION OF AN AREA EFFICIENT BODY CONTACT | ||
| Majlesi Journal of Electrical Engineering | ||
| مقاله 8، دوره 1، شماره 1، شهریور 2007، صفحه 63-66 اصل مقاله (217.7 K) | ||
| نوع مقاله: Review Article | ||
| شناسه دیجیتال (DOI): 10.1234/mjee.v1i1.52 | ||
| چکیده | ||
| We have used three-dimensional simulation to investigate application of a new body contact to SOI devices. Performance characteristics of the new body contact on high-voltage SOI devices were studied. Our comparative investigation showed increased current drive, improved cutoff frequency, reduced on-resistance while attaining satisfactory breakdown voltage. The new body contact is applicable to both high and low voltage SOI MOSFETs. | ||
| کلیدواژهها | ||
| en | ||
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آمار تعداد مشاهده مقاله: 28 تعداد دریافت فایل اصل مقاله: 47 |
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