Temperature Effect Investigation of 45nm Silicon-on-Diamond MOSFET Transistors

Majlesi Journal of Electrical Engineering

مقاله 4، دوره 3، شماره 1، فروردین 2009، صفحه 27-32   

نوع مقاله: Review Article

شناسه دیجیتال (DOI): 10.1234/mjee.v3i1.141

نویسندگان

Arash Daghighi^* ؛ Azar Farajzadeh

Shahrekord University

چکیده

The self-heating effects (SHE) in 45nm Silicon-on-Insulator (SOI) and Silicon-on-Diamond (SOD) structures were investigated. As a result of high thermal conductivity of diamond, SHE is much less pronounced in SOD structures. This makes SOD transistors suitable for high power applications were large power density is required. It was shown that in SOD substrate the generated heat in active transistors not only spreads away in the substrate but also transfers to the auxiliary non-active transistors on the same die through the diamond film. Our hydrodynamic simulation results showed 8 times more off-current in auxiliary transistors than SOI substrate. The thermal coupling between the neighboring devices in SOD structures represent device miss-match in analog circuits were high degree of matching is required. 

کلیدواژه‌ها

Silicon on Insulator MOSFET؛ en؛ Body Contact؛ body resistance؛ Output Conductance؛ Self-Heating Effects

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