Investigation of Temperature Effects in 45nm Silicon-on-Diamond MOSFET Transistor

Majlesi Journal of Electrical Engineering

مقاله 7، دوره 3، شماره 4، خرداد 2009، صفحه 60-65   

نوع مقاله: Review Article

شناسه دیجیتال (DOI): 10.1234/mjee.v3i4.250

چکیده

 In this paper, the self-heating effects (SHE) in 45nm Silicon-on-Insulator (SOI) and Silicon-on-Diamond (SOD) are investigated. As a result of the high thermal conductivity of diamond, SHE is much less pronounced in SOD structures. This makes SOD transistors suitable for high power applications were large power density is required. Our hydrodynamic simulation results show that in SOD substrate the generated heat in active transistors not only spreads away in the substrate but also is transferred to the auxiliary non-active transistors on the same die through the diamond film. Simulation results showed up to 8 times more off-current in auxiliary transistors than SOI substrate. The thermal coupling between the neighboring devices in SOD structures represent increased power consumption and device miss-match in analog circuits were high degree of matching is required.  

کلیدواژه‌ها

MOSFET؛ en؛ Silicon-on-Insulator؛ Silicon-on-Diamond؛ Hydrodynamic Simulation؛ Self- heating Effect