Crosstalk Enhancement in 32 nm FD SOI MOSFET using HR Substrate and Multilayer BOX

Majlesi Journal of Electrical Engineering

مقاله 4، دوره 5، شماره 2، شهریور 2011   

نوع مقاله: Review Article

نویسندگان

Parisa Tavanazadeh^* ؛ Arash Daghighi؛ Homayoun Mahdavi-Nasab

چکیده

In this paper, the crosstalk in 32 nm UTB SOI MOSFET is examined by using a new structure, a high resistivity substrate, and a multilayer BOX (SiO2-Diamond). The electrical and thermal characteristics of the conventional SOI and a multilayer BOX SOI are compared, and it is concluded that parasitic capacitances and crosstalk are improved by incorporating multilayer BOX to a HR Substrate. In a conventional HR FD SOI, crosstalk is approximately -121dB, while by incorporating multilayer BOX substrate and increasing the thickness of the Diamond to 100nm, crosstalk can be reduced by 20%.

کلیدواژه‌ها

ultra thin body silicon-on-insulator MOSFET؛ en؛ parasitic capacitance؛ high resistivity substrate؛ crosstalk؛ diamond

مراجع

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