Current-Mode High-Precision Full-Wave Rectifier Based on Carbon Nanotube Field Effect Transistors

Majlesi Journal of Electrical Engineering

مقاله 6، دوره 9، شماره 3، آذر 2015، صفحه 43-51   

نوع مقاله: Review Article

نویسندگان

Neda Talebipour^* ؛ Peiman Keshavarzian

چکیده

Carbon nanotube field effect transistors (CNTFET) with extraordinary properties such as high carrier mobility, excellent thermal conductivity and high current carrying capability could be seen as a good replacement for CMOS technology. By connecting gate and drain in carbon nanotube field effect transistor, this device operates as a diode, similar to a diode-connected transistor in a silicon device. This paper presents a novel design of a high performance current mode (CM) precision full-wave rectifier by using just four diode-tied carbon nanotube field effect transistors. All simulations have been performed in HSPICE, and show that this circuit has an excellent performance at high frequencies.

کلیدواژه‌ها

Carbon Nanotube Field Effect Transistors؛ en؛ current mode؛ Precision Full-Wave Rectifier

مراجع

[1] P. Sahu, M. Singh, and A. Baishya, “A novel versatile precision full-wave rectifier, ” IEEE Transactions on Instrumentation and Measurement, Vol. 59, No. 10, pp. 2742-2746, October. 2010.

[2] A. A. Ciubotaru, “Absolute-value circuit using junction field-effect transistors,” IEEE Transactions on Circuits and Systems—II: Analog and Digital Signal Processing, Vol. 50, No. 8, pp. 481-484, August 2003.

[3] M. Kumngern, “Cmos current-mode precision full-wave rectifier with improved bandwidth,” Digital Information and Communication Technology and it's Applications (DICTAP), Second International Conference on. Bangkok, pp. 283 – 286, May. 2012.

[4] C. Toumazou and F. J. Lidgey, “Fast current-mode precision rectifier,” Electron. Wireless World, Vol. 93, No. 1621, pp. 1115–1118, 1987.

[5] SH. Minaei and E. Yuce, “New squarer circuits and a current-mode full-wave rectifier topology suitable for Integration,” Radioengineering, Vol. 19, No. 4, pp. 657 – 661, December. 2010.

[6] J. Koton, A. Lahiri, N. herencsar and K. Vrba, “Current-Mode Dual-Phase Precision Full-Wave Rectifier Using Current-Mode Two-CellWinner-Takes-All (WTA) Circuit,” Radioengineering, Vol. 20, No. 2, pp. 428-432, June. 2011.

[7] F. KHateb, J. Vavra and D. Biolek, “A Novel Current-Mode Full-Wave Rectifier Based on One CDTA and Two Diodes,” Radioengineering, Vol. 19, pp. No. 3, pp. 437-445, September 2010.

[8] SH. Lin, Y. Kim, F. Lombardi, “Design of a ternary memory cell using CNTFETs”, IEEE Transactions on Nanotechnology, Vol. 11, No. 5, pp. 1019 – 1025, September. 2012.

[9] S. Iijima, “Helical microtubules of graphic carbon,” Nature, 345, pp. 56–58, November. 1991.

[10] S. J. Tans, A. R. M. Verschueren and C. Dekker, “Room- temperature transistor based on a single carbon nanotube,” Nature, Vol. 393, pp. 49 – 59, May. 1998.

[11] P. L. Mceuen, M. S., Fuhrer and H. Park, “Single-walled carbon nanotube electronics,” IEEE Tran on Nanotechnology, Vol. 1, No. 1, pp. 78 – 85, March. 2002.

[12] P. Avouris, J. Appenzeller, R. Matrel and S. J. Wind, “Carbon nanotube electronics,” Proceeding of IEEE, Vol. 91, No. 11, pp. 1772 – 1784, November. 2004.

[13] J. S. Hwang, H. T. Kim, M. H. Son, J. H. Oh, S. W. Hwang and D. Ahn, “Electronic transport properties of a single-wall carbon nanotube field effect transistor with deoxyribonucleic acid conjugation,” Physica E: Low-dimensional Systems and Nanostructures, Vol. 40, No. 5, pp. 1115 – 1117, March. 2008.

Majlesi Journal of Electrical Engineering Vol. 9, No. 3, September 2015

50

[14] M. Pourfath, ET AL, “Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors,” Journal of Computational Electronics, Vol. 4, No. 5, pp. 75 – 78, 2005.

[15] J. Guo, A. Javey, H. Dai, S. Datta and M. Lundstrom, “Predicted Performance advantages of carbon nanotube transistors with doped nanotubes source/drain,” Phys Rev B Condens.Matter,cond-mat/0 309 039, 2003.

[16] J. Deng, H. S. P. Wong, “A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application - Part I: Model of the Intrinsic Channel Region,” IEEE Trans Electron Devices, Vol. 54, pp. 3186-3194, December. 2007.

[17] J. Deng, H. S. P. Wong, “A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application - Part II: Full Device Model and Circuit Performan Benchmarking,” IEEE Trans Electron Devices, Vol. 54, pp. 3195–3205, December. 2007.

[18] CH. Wang, K. Ryu, A. Badmeav, N. Patil, A. Lin, S. Mitra, PH. Wong and CH. ZHou, “Device study, chemical doping, and logic circuits based on transferred aligned single-walled carbon nanotubes,” Physics Letters, Vol. 93,No. 3, pp. 033101 – 033101-3, July. 2008.

[19] S. University, CNFET model Website, Stanford, [Online]. Available at: http://nano.stanford.edu/model.php?id=23.

[20] D. Biolek, V. Biolkova, Z. Kolka, “AC analysis of operational rectifiers via conventional circuit simulators,”WSEAS Transactions on Circuits and Systems, Vol. 3, No. 10, pp. 2291 – 2295, 2004.

[21] Liang, J., Chen, L., Han, J., Lombardi, F.: Design and Evaluation of Multiple Valued Logic Gates using Pseudo N-type Carbon Nanotube FETs 13(4), 695-708 (2014).

[22] M. H. Moaiyeri, R. F. Mirzaee, A. Doostaregan, K. Navi, O. Hashemipour, “A universal method for designing low-power carbon nanotube FET-based multiple-valued logic circuits” IET Computers & Digital Techniques, Vol. 7, No. 4, pp. 167-181, 2013.

[23] S. L. Murotiya, A. Gupta, “CNTFET-Based Design of Content-Addressable Memory cell,” International Journal of Electronics Letters (2014), doi: 10.1080/21681824.2014.911368.

[24] S. A. Ebrahimi, P., Keshavarzian, “Fast low-power full-adders based on bridge style minority function and multiplexer for nanoscale,” International Journal of Electronics, Vol. 100, No. 6, pp. 727-745, 2013.

[25] K. Sridharan, S. Gurindagunta, and V. Pudi, “Efficient multiternary digit Adder design in CNTFET technology,” Nanotechnology, IEEE Transactions on, Vol. 12, No. 3, pp. 283-287, 2013.

[26] M. Jamalizadeh, F. Sharifi, M. H. Moaiyeri, K. Navi, O., Hashemipour, “Five new MVL current mode differential absolute value circuits based on carbon nano-tube field effect transistors (CNTFETs),” Nano-Micro Letters, Vol. 2, No. 4, pp. 227-234, 2011.

[27] P. Keshavarzian, K. Navi, “Universal ternary logic circuit design through carbon nanotube technology,” International Journal of Nanotechnology, Vol. 6, No. 10, pp. 942-953, 2009.

[28] S. Lin, Y. B. Kim, and Lombardi, “Design of a ternary memory cell using CNTFETs,” Nanotechnology, IEEE Transactions on, Vol. 11, No. 5, pp. 1019-1025, 2012.

[29] S. Lin,Y. B. Kim, and F. Lombardi, “The CNTFET-based design of ternary logic gates and arithmetic circuits,” IEEE Trans. Nanotechnol, Vol. 10, No. 2, pp. 217–225, 2011.

[30] A. Raychowdhury, K., Roy, “Carbon-nanotube-based voltage-mode multiple-valued logic design,” Nanotechnology, IEEE Transactions on, Vol. 4, No. 2, pp. 168-179, 2005.

[31] P. Keshavarzian, K. Navi, “Efficient Carbon Nanotube Galois Field Circuit Design”, IEICE Electronics Express, Vol. 6, pp. 546–552, 2009.

[32] S. Lin, Y. B. Kim, and F. Lombardi, “Design of a CNTFET-based SRAM Cell by Dualchirality Selection”, IEEE Transactions on Nanotechnology, Vol. 9, pp. 30–37, 2010.

[33] P. Keshavarzian, “Novel and general carbon nanotube FET-based circuit designs to implement all of the 39 ternary functions without mathematical operations,” Microelectronics Journal, Vol. 44, No. 9, pp. 794-801, 2013.

[34] Navi, Keivan, et al. “Two novel ultra-high speed carbon nanotube Full-Adder cells,” IEICE Electronics Express, 6.19, pp. 1395-1401, 2009.

[35] Jamjaem, Theerayut, and Bancha Burapattanasiri. “High Precision HalfWave Rectifier Circuit In Dual Phase Output Mode,” arXiv preprint arXiv:1001.2253, 2010.

[36] B., Boonchai, W. Surakampontom, “A CMOS Current-mode squarer/rectifier circuit,” Circuits and Systems, 2003. ISCAS'03. Proceedings of the 2003 International Symposium on. Vol. 1, 2003.

[37] Ch. Ch. Chang, Sh.-I. Liu, “Current-mode full-wave rectifier and vector summation circuit,” Electronics Letters 36.19, pp. 1599-1600, 2000.

[38] K., Jaroslav, N. Herencsar, and K. Vrba, “Minimal configuration versatile precision full-wave rectifier using current conveyors,” Proceedings of the European Conference of Circuits Techonology and Devices-ECCTD 2010, 2010.

[39] Monpapassorn, Adisak, et al., “CMOS High Frequency/Low Voltage Fult-Wave Rectifier,” Thammasat Int. J. Sc. Tech 8.2, 2003.

[40] R., Vanchai, R. Guntapong, “A low-voltage wide-band CMOS precision full-wave rectifier” International journal of electronics 89.6, pp. 467-476, 2002.

[41] Ramirez-Angulo, J., et al. “Very low-voltage class AB CMOS and bipolar precision current rectifiers” Electronics Letters 35.22, pp. 1904-1905, 1999.

[42] Ramirez-Angulo, J. “High frequency low voltage CMOS diode” Electronics Letters 28.3, pp. 298-299, 1992.

[43] Ch. Ch. Chang, Sh.-I. Liu, “Current-mode full-wave rectifier and vector summation circuit” Electronics

Majlesi Journal of Electrical Engineering Vol. 9, No. 3, September 2015

51

Letters 36.19, pp. 1599-1600, 2000.

[44] W. Surakampontorn, R. Vanchai, “Integrable CMOS sinusoidal frequency doubler and full-wave rectifier” International Journal of Electronics 73.3, pp. 627-632, 1992.

[45] K., Jaroslav, N. Herencsar, and K. Vrba, “Current-mode precision full-wave rectifier using single DXCCII and two diodes” Circuit Theory and Design (ECCTD), 2011 20th European Conference on. IEEE, 2011.

[46] Kh. Surachet, V. Kasemsuwan, “High performance CMOS current-mode precision full-wave rectifier (PFWR)” Circuits and Systems, 2003. ISCAS'03. Proceedings of the 2003 International Symposium on. Vol. 1. IEEE, 2003.

[47] M. Adisak, K. Dejhan, and F. Cheevasuvit, “CMOS dual output current mode half-wave rectifier” International Journal of Electronics 88.10, pp. 1073-1084, 2001.