Simulation of the Process of LDMOS Transistor Manufacture and Optimizing it to Increase the Current of Work

Majlesi Journal of Electrical Engineering

مقاله 5، دوره 11، شماره 4، اسفند 2017، صفحه 37-43   

نوع مقاله: Review Article

نویسندگان

Payman Bahrami^* ؛ Mohammad Reza Shayesteh؛ Mohammad Eslami

Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran

چکیده

This paper presents the simulation of the process of LDMOS transistor manufacturing by using Silvaco software and by relying on the ability of calculating the basic parameters of transistor dependencies, focusing on the optimization of the manufacturing process in order to increase the current of work. The simulation of manufacturing process of this type of transistor which is a base for its real manufacturing is of the utmost importance. By using this simulation and reviewing each parameter, we can achieve the optimized manufacturing process by focusing each basic parameter and by paying attention to its required application. In order to design, we first define the construction procedures and the necessary processes using the Athena simulator, and then we use the Atlas device simulator to acquire electrical parameters.

کلیدواژه‌ها

LDMOS transistor؛ en؛ Current operating point؛ Threshold voltage؛ Cut-off Frequency؛ Transconductance؛ Breakdown voltage

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