An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states

Journal of Nanoanalysis

مقالات آماده انتشار، پذیرفته شده، انتشار آنلاین از تاریخ 29 فروردین 1399

نوع مقاله: Original Research Paper

شناسه دیجیتال (DOI): 10.22034/jna.2020.1881749.1166

نویسندگان

Ali Heydari¹؛ Seyed Ali Sedigh Ziabari^{* 2}؛ Fayzollah Khorramrouz²

¹Department of Electrical Engineering, Guilan University, Rasht, Iran.

²Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran

چکیده

In this paper, we propose an innovative and low computational cost approach that can be used to find optimal values of parameters of a nanoscale dual gate tunneling field-effect transistor (DG-TFET). In this way, after obtaining analytical expressions for potential and energy bands of the device using the Poisson equation, the tunneling length is extracted at source-channel and channel-drain tunnel junctions in the AMBIPOLAR, Off and On states. Due to the tunneling length equation, the different values of gate work function and dielectric constant of the device are swept to determine the minimum and maximum design limits. According to the above range, the necessary checks are made to reach the local optimal behaviors. These optimum points are explained based on the achievement of optimal device performance. The accuracy and consistency of the proposed model is validated with the TCAD simulation results. The present model can be a handful for the study of TFET performance.

کلیدواژه‌ها

2D Analytical model؛ Surface potential؛ BTBT؛ minimum tunneling length؛ DG-TFET