An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states

Journal of Nanoanalysis

دوره 7، شماره 3، آذر 2020، صفحه 190-199   

نوع مقاله: Original Research Paper

شناسه دیجیتال (DOI): 10.22034/jna.2020.680049

نویسندگان

Fayzollah Khorramrouz¹؛ Seyed Ali Sedigh Ziabari^{* 1}؛ Ali Heydari^{* 2}

¹Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran

²2 Smartec B. V. The Netherland, Electronic Instrumentation Laboratory, Delft University of Technology, the Netherlands 3 Department of Electrical Engineering, Guilan University, Rasht, Iran.

چکیده

In this paper, we propose an innovative and low computational cost approach
that can be used to find optimal values of parameters of a nanoscale dual gate
tunneling field-effect transistor (DG-TFET). In this way, after obtaining analytical
expressions for potential and energy bands of the device using the Poisson
equation, the tunneling length is extracted at source-channel and channel-drain
tunnel junctions in the AMBIPOLAR, Off and On states. Due to the tunneling
length equation, the different values of gate work function and dielectric constant
of the device are swept to determine the minimum and maximum design
limits. According to the above range, the necessary checks are made to reach
the local optimal behaviors. These optimum points are explained based on the
achievement of optimal device performance. The accuracy and consistency of
the proposed model are validated with the TCAD simulation results. The present
model can be a handful for the study of TFET performance.

کلیدواژه‌ها

2D Analytical model؛ Surface potential؛ BTBT؛ minimum tunneling length؛ DG-TFET