Design of Optimum Active Layer Thickness in Double Heterostructure Broad Area Ga As/Al_x Ga_(1-x) As Laser Diodes

journal of Artificial Intelligence in Electrical Engineering

دوره 9، شماره 34، آذر 2020، صفحه 1-5   

نوع مقاله: Original Article

نویسندگان

nasser moslehi milani^{* 1}؛ mohammad hosein salmani yengejeh²؛ Majid shabzendeh¹

¹Department of Physics, Ahar Branch, Islamic Azad University, Ahar, Iran

²Department of Mathematics, Chalous Branch, Islamic Azad University, Chalous, Iran

چکیده

In this work, we calculate optimum thickness of bulk active layer for Ga As/〖Al〗_x 〖Ga〗_(1-x) As laser diodes. We have done these calculations for fundamental oscillation mode of laser with different aluminium contents (fractional percents) in confinement layers. Our calculations were based on the analytical solution of Maxwell equations. The results indicate that the optimum thickness for fundamental mode is dependent on difference of refractive indices of active and confinement layers. The results reveal that the best active layer thicknesses for fundamental mode of laser are d_0=0.63,0.44,0.36 and 0.32 μm for x=0.1,0.2,0.3 and 0.4 aluminium percents in separate confinement heterostructure (SCH) layers respectively.

کلیدواژه‌ها

Optimum active layer thickness؛ Maxwell equations؛ Separate Confinement Heterostructure (SCH)