The effect of the anodization voltage changes on the electric resistance of porous anodic alumina barrier layer and its thickness used in strain sensing devices

Journal of Simulation and Analysis of Novel Technologies in Mechanical Engineering

مقاله 4، دوره 14، شماره 2، شهریور 2022، صفحه 37-42   

نوع مقاله: Research article

نویسنده

Abolfazl Salehi Amnieh Khuzani^*

Department of Physics, Khomeinishahr Branch, Islamic Azad University, Isfahan

چکیده

To investigate the influence of aluminum anodization voltage on the barrier layer thickness of porous anodic alumina (PAA) and its electric resistance used in different technologies such as strain-sensing technology, samples in different voltages and variety condition of mild and hard anodization were fabricated. In different researches, different anodic alumina thicknesses have been tested and their effect on protection against humidity is studied by monitoring sensor resistance. Measurement of electrical resistant of barrier layer during the voltage changing shows that there is a transition region in which electric resistance of samples is located between hard and mild anodized region. The SEM investigation reveals that the barrier layer thickness is linearly proportional to the anodization voltage. But the barrier layer resistance in hard anodization is lower than that one in mild anodization. The observed paradox can be related to higher ionic mobility of ions in barrier layer which is formed in hard anodization.

کلیدواژه‌ها

Porous anodic alumina؛ Strain sensing devices؛ Mild and Hard Anodization؛ Electrical Resistant؛ barrier layer thickness

مراجع

 

• Evangelos Aslanidis, Evangelos Skotadis, Evangelos Moutoulas and Dimitris Tsoukalas (2020). Thin Film Protected Flexible Nanoparticle Strain Sensors: Experiments and Modeling. Sensors,20(9), 2584.
• Sajad Nadian Bersiani, Ahmad Keshavarzi and Amin Kolahdooz (2017). Experimental Study of the Voltage and Number of the Coil Rounds in Electromagnetic Forming Process of the V Shape Aluminum sheets. Journal of Simulation and Analysis of Novel Technologies in Mechanical Engineering (JSME).9(2), 209-220
• Che, B. B. Lakshmi, C. R. Martin, E. R. Fisher, R. S. Ruoff (1998). Chemical Vapor Deposition Based Synthesis of Carbon Nanotubes and Nanofibers Using a Template Method. Chem. Matter, 29(10), 260-267.
• Dechong Maa, Jingzhe Zhaoa, Yan Zhao, Xinli Hao, Linzhi Li, Li Z hang, Yan Lu, Chengzhong Yu (2012). Synthesis of bismuth nanoparticles and self-assembled nanobelts by a simple aqueous route in basic solution. Colloids and Surfaces A: Physicochemical and Engineering Aspects 395(5), 276-283.
• Aiswarya Remadevi, Dijith Kesavapilai Sreedeviamma, and Kuzhichalil P. Surendran (2018). Printable Hierarchical Nickel Nanowires for Soft Magnetic Applications, ACS Omega 3(10), 14245–14257.
• Hyeonhee Roh, Young Jun Yoon, Jin Soo Park, Dong-Hyun Kang, Seung Min Kwak, Byung Chul Lee, and Maesoon Im (2022), Nano-Micro Letters 14(24).
• Rajendr, Biren J. Parmar, A. K. Sharma, H. Bhojraj, M. M. Nayakand and K. Rajanna (2005). Pressure sensor development using the hard-anodized aluminum diaphragm and sputtered Pt-W thin-film strain sensors. The 13th International Conference on Solid-State Sensors, Actuators and Microsystems.
• Rajanna, M. M. Nayak, R. Krishnamurthy and S. Mohan (1997). Low-cost thin-film pressure transducer. Vacuum, 48(6) 521-524.
• Masuda and K. Fukada (1995). Ordered Metal Nanohole Arrays Made by a Two-Step Replication of Honeycomb Structures of Anodic Alumina. Science, 268(5216), 1466-1468.
• Nielsch, J. Choi, K. Schwirn, R.B. Wehrspohn, U. Gösele (2002). Selfordering Regimes of Porous Alumina: The 10 Porosity Rule. Nano Letters 2(7), 677–680.
• Jinwei Cao, Chen Wang, Zhaoqing Gao, Shengyan Shang, Qidi Gu, Nan Gao, Yunpeng Wang and Haitao Ma (2020). Formation of Nanoporous Anodized Tin Oxide Films in Electrolyte Containing F− and S2−. ECS Journal of Solid-State Science and Technology, 9(10).
• Lee and J. C. Kim (2010). Highly ordered porous alumina with tailor-made pore structures fabricated by pulse anodization. Nanotechnology 21(48).