A 3.1-10.6 GHZ Ultra-Wideband CMOS Low Noise Amplifier in 0.18 μm CMOS Technology

Majlesi Journal of Telecommunication Devices

مقاله 4، دوره 5، شماره 4، فروردین 2016   

نوع مقاله: Articles

نویسنده

Meysam Azimi-Roein^*

چکیده

A new ultra-wideband 3.1-10.6 GHz low noise amplifier(LNA), designed in chartered 0.18μm technology, is presented in this paper.By using  series inductive peaking in the feedback loop is used to improve the basndwidth of the LNA. Based on the noise-canceling technique,voltage  gain is increased. Measurements show that the S11 and S22 are less than -10 dB, and the maximum amplifier gain S21 gives 12.9dB, and the minimum noise figure is 2.6dB, and the power consumption is 13.6 mW from 1.8V supply voltage.     

کلیدواژه‌ها

CMOS؛ en؛ low noise amplifier؛ Ultra-wideband؛ gain

مراجع

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