The FDTD Simulation of QDLED Performance Dependency on the Location of Colloidal Quantum Dots

Majlesi Journal of Electrical Engineering

مقاله 11، دوره 14، شماره 3، آذر 2020، صفحه 89-94   

نوع مقاله: Review Article

شناسه دیجیتال (DOI): 10.29252/mjee.14.3.11

نویسندگان

Neda Heydari¹؛ Seyed Mohammad Ghorashi^{* 2}؛ Mohammadreza Fathollahi³

¹Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan, Iran.

²Department of Physics, Faculty of Physics, University of Kashan, Kashan, Iran.

³Faculty of Electrical and Computer Engineering, Qom University of Technology (QUT), Qom, Iran.

چکیده

All types of Light Emitting Diodes (LEDs) are desirable because of their widespread applications. The Quantum Dot-Based Light Emitting Diodes (QDLEDs) have a lot of unique properties attracting more attention. Predicting performance of QDLEDs can lead to a better and more efficient design of the device. In this paper, we have attempted to investigate the dependency of the device performance on the location of Quantum Dots (QDs) and determine the best location for the QDs in the QDLEDs. We use FDTD method to simulate and analysis the QDLEDs structure. The QDs are located in five different positions in TPBi layer then results are compared with each other. The results show that the closer the QDs to the hole transport layer (HTL), the better the luminescence. This improvement would be explained by two charge transport mechanisms including direct charge injection and exciton energy transfer. The results show that when the QDs are closer to the HTL, the device performance is better due to the greater balance of carriers.  In this condition holes can transfer from the HTL to the valence band easier.

کلیدواژه‌ها

Quantum Dot؛ Efficiency؛ Light emitting diode؛ Location

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